Band Gap and DOS in Multi-layer Graphene Systems

Abstract

Graphene is a single layer of carbon atoms arranged in a hexagonal honeycomb lattice, characterized by sp2 hybridization. It is a nanomaterial known for its excellent thermal and electrical conductivity, making it ideal for the next generation of faster, thinner electronic devices. Notably, in 2018, researchers discovered that when two graphene layers are twisted at a specific “magic angle,” the material exhibits superconductivity at low temperatures, which arises from strong electron correlations in flat electronic bands. The unique properties of graphene, such as high electron mobility, tensile strength, and transparency, make it a promising material for various applications including flexible electronics, quantum computing, and advanced sensors. The material's potential to revolutionize industries like energy, electronics, and healthcare emphasizes the need for further research into its electronic behavior and stacking configurations. In this paper, we explore the multi-layer graphene systems with AB and ABC stacking, and their electronic properties including band structures and density of state (DOS). By applying tight-binding model to these systems, we conclude that both the band gaps and energy difference between DOS peaks can be widen by increasing the displacement fields.